Electron emission from ferroelectric thin films enhanced by the presence of ferroelectric domains

In this work ferroelectric domain enhanced electron emission mechanisms are proposed. The polarization distribution near 90° domain walls is calculated by solving a set of second order differential equations including the Poisson's one and equations derived from an expansion of the free energy...

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Published in2007 Sixteenth IEEE International Symposium on the Applications of Ferroelectrics pp. 346 - 349
Main Authors Suchaneck, G., Vidyarthi, V.S., Milde, G., Gerlach, G., Solnyshkin, A.V., Kislova, I., Otto, T., Reichenbach, R., Klumbies, H., Mieth, O., Eng, L.M.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2007
Subjects
Differential equations
Electron emission
Electron traps
Ferroelectric materials
Physics
Piezoelectric films
Piezoelectric polarization
Poisson equations
Transistors
Tunneling
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Summary:In this work ferroelectric domain enhanced electron emission mechanisms are proposed. The polarization distribution near 90° domain walls is calculated by solving a set of second order differential equations including the Poisson's one and equations derived from an expansion of the free energy Φ(P) in power series of the polarization according to the Devonshire-Landau-Ginzburg theory. Domain walls intersecting the emitting surface cause sufficient electric fields and lower the potential barrier for electron emission. This induces centers of enhanced electron emission. Relaxing domain walls were found to excitate trapped excess electrons in front of the wall.
ISBN:1424413338
9781424413331
ISSN:1099-4734
2375-0448
DOI:10.1109/ISAF.2007.4393261