Three-Dimensional Transient Interconnect Analysis With Regard to Mechanical Stress

• Published in: 2006 13th International Symposium on the Physical and Failure Analysis of Integrated Circuits pp. 154 - 157
• Main Authors: Holzer, S., Hollauer, C., Ceric, H., Karner, M., Grasser, T., Langer, E., Selberherr, S.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.07.2006
• Subjects: Conducting materials; Electromigration; Equations; Microelectronics; Temperature distribution; Thermal conductivity; Thermal expansion; Thermal stresses; Thermomechanical processes; Transient analysis
• DOI: 10.1109/IPFA.2006.251019
• ISBN: 1424402050; 9781424402052
• ISSN: 1946-1542

We presented a transient electro-thermal analysis with STAP considering self-heating. Thermo-mechanical simulators, e.g. FEDOS, are coupled to provide appropriated input data for electromigration analysis to obtain predictive results. The presented electro-thermal results depict the high temperature gradients close to heat sources and heat sinks. Further regions of high risk of electromigration are presented as results of thermo-mechanical simulations. The vias as well as edges and corners of interconnects in general are highly stressed regions due to the mismatch of thermal volume expansion coefficients and due to weak material adhesion of material interfaces