High-k metal gate-bounded Silicon Controlled Rectifier for ESD protection

An ultra-low trigger gate-bounded SCR using a high-k metal gate process is proposed, which has a superb immunity to protect thin oxide against CDM-like stresses without a resistor in series. This cell is fast triggered by the channel current injection and can meet the low leakage and capacitance req...

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Bibliographic Details
Published inElectrical Overstress / Electrostatic Discharge Symposium Proceedings 2012 pp. 1 - 7
Main Authors Chang, T., Hsu, Y., Tsai, T., Tseng, J., Lee, J., Song, M.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.2012
Subjects
Electrostatic discharges
Hidden Markov models
Leakage current
Logic gates
Stress
Threshold voltage
Thyristors
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Summary:An ultra-low trigger gate-bounded SCR using a high-k metal gate process is proposed, which has a superb immunity to protect thin oxide against CDM-like stresses without a resistor in series. This cell is fast triggered by the channel current injection and can meet the low leakage and capacitance requirements for highspeed I/O circuits.
ISBN:1467314676
9781467314671
ISSN:0739-5159
2164-9340