Capacitance simulations and measurements of 3D pixel sensors under 55 MeV proton exposure

3D pixel sensors are a novel type of silicon detector designed for high energy physics and other applications. Their features include high spatial resolution and radiation tolerance. The design consists of alternating rows of n and p-type columns in a p-type substrate. Capacitance data are presented...

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Bibliographic Details
Published in2007 IEEE Nuclear Science Symposium Conference Record Vol. 3; pp. 2164 - 2168
Main Authors Metcalfe, J.E., Gorelov, I., Hoeferkamp, M., Seidel, S.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.10.2007
Subjects
capacitance
Capacitance measurement
Capacitive sensors
Detectors
Electrodes
Geometry
irradiation
pixel
Protons
Sensor phenomena and characterization
Silicon
Telephony
Testing
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Summary:3D pixel sensors are a novel type of silicon detector designed for high energy physics and other applications. Their features include high spatial resolution and radiation tolerance. The design consists of alternating rows of n and p-type columns in a p-type substrate. Capacitance data are presented for 3D pixel devices characterized after exposure to various fluences of 55 MeV protons. Simulations and two methods for the measurement of the inter-electrode capacitance as a function of input signal frequency are shown.
ISBN:1424409225
9781424409228
ISSN:1082-3654
2577-0829
DOI:10.1109/NSSMIC.2007.4436580