Capacitance simulations and measurements of 3D pixel sensors under 55 MeV proton exposure
3D pixel sensors are a novel type of silicon detector designed for high energy physics and other applications. Their features include high spatial resolution and radiation tolerance. The design consists of alternating rows of n and p-type columns in a p-type substrate. Capacitance data are presented...
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Published in | 2007 IEEE Nuclear Science Symposium Conference Record Vol. 3; pp. 2164 - 2168 |
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Main Authors | , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.10.2007
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Subjects | |
Online Access | Get full text |
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Summary: | 3D pixel sensors are a novel type of silicon detector designed for high energy physics and other applications. Their features include high spatial resolution and radiation tolerance. The design consists of alternating rows of n and p-type columns in a p-type substrate. Capacitance data are presented for 3D pixel devices characterized after exposure to various fluences of 55 MeV protons. Simulations and two methods for the measurement of the inter-electrode capacitance as a function of input signal frequency are shown. |
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ISBN: | 1424409225 9781424409228 |
ISSN: | 1082-3654 2577-0829 |
DOI: | 10.1109/NSSMIC.2007.4436580 |