ALD ZrO2 processes for BEoL device applications

In this paper three different ZrO 2 ALD processes are studied as high-k dielectric in BEoL device applications. One metal organic precursor is compared to a halide precursor used with two different oxidizing agents. The structure, composition and morphology of the films are analyzed on bare Si wafer...

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Bibliographic Details
Published in2014 IEEE International Conference on IC Design & Technology pp. 1 - 4
Main Authors Weinreich, Wenke, Seidel, Konrad, Polakowski, Patrick, Riedel, Stefan, Wilde, Lutz, Triyoso, Dina H., Nolan, Mark G.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2014
Subjects
atomic layer deposition
BEoL application
Capacitance
Capacitors
High K dielectric materials
Leakage currents
MIM capacitors
Temperature measurement
Tin
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Summary:In this paper three different ZrO 2 ALD processes are studied as high-k dielectric in BEoL device applications. One metal organic precursor is compared to a halide precursor used with two different oxidizing agents. The structure, composition and morphology of the films are analyzed on bare Si wafers and the electrical properties such as capacitance, leakage and reliability are investigated on fully integrated BEoL decoupling capacitors. One of the halide ALD processes is identified as the most promising candidate for BEoL capacitor applications.
ISSN:2381-3555
2691-0462
DOI:10.1109/ICICDT.2014.6838604