A New Method for High-Rate Deep Dry Etching of Silicate Glass with Variable ETCH Profile

Compared to the deep reactive ion etching (DRIE) of silicon, the etching of silicate glasses by plasma processing is much more critical. Especially high etch rates as well as highly selective etching are challenging issues in this respect. The following paper reports on a dry etching method offering...

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Bibliographic Details
Published inTRANSDUCERS 2007 - 2007 International Solid-State Sensors, Actuators and Microsystems Conference pp. 81 - 84
Main Authors Bertz, A., Fendler, R., Schuberth, R., Hentsch, W., Gessner, T.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2007
Subjects
Deep glass etching
Dry etching
Etch profile
Etch rate
Etch selectivity
Glass
Optical materials
Plasma applications
Plasma chemistry
Plasma confinement
Plasma materials processing
Plasma measurements
Plasma processing
Plasma temperature
Silicon
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Summary:Compared to the deep reactive ion etching (DRIE) of silicon, the etching of silicate glasses by plasma processing is much more critical. Especially high etch rates as well as highly selective etching are challenging issues in this respect. The following paper reports on a dry etching method offering not only selective and high rate etching but a high flexibility for the etch profile too.
ISBN:9781424408412
1424408415
ISSN:2159-547X
DOI:10.1109/SENSOR.2007.4300076