Impact of initial-oxidation on 1/f noise and subthreshold swing of n-channel MOSFETs

The impact of initial-oxidation on Low-frequency noise and subthreshold swing of MOSFETs is investigated. The low-frequency noise is improved significantly with initial-oxidation and SS reduction is observed. Analysis on experimental results shed light on the well-known controversy about the origin...

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Bibliographic Details
Published in2006 IEEE Nanotechnology Materials and Devices Conference Vol. 1; pp. 514 - 515
Main Authors Han-Soo Joo, In-Shik Han, Tae-Kyu Goo, Ook-Sang Yoo, Won-Ho Choi, Ga-Won Lee, Hi-Deok Lee
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.10.2006
Subjects
1f noise
Degradation
drain current degradation
flicker noise
Fluctuations
initial oxidation
Low-frequency noise
MOSFETs
Noise figure
Noise measurement
Oxidation
Plasma measurements
Semiconductor device noise
subthreshold swing
threshold voltage
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Summary:The impact of initial-oxidation on Low-frequency noise and subthreshold swing of MOSFETs is investigated. The low-frequency noise is improved significantly with initial-oxidation and SS reduction is observed. Analysis on experimental results shed light on the well-known controversy about the origin of low-frequency noise. In this paper, the impact of initial-oxidation in thin gate oxide n-channel MOSFETs is characterized across gate-bias IV.
ISBN:9781424405404
1424405408
DOI:10.1109/NMDC.2006.4388880