1.3 micron InGaAsN oxide-confined VCSELs grown by MOCVD

Summary form only given. An Emcore D 180 metalorganic chemical vapor deposition (MOCVD) system was used to develop 1.3 micron InGaAsN/GaAs vertical cavity surface emitting lasers (VCSELs). The InGaAsN VCSELs are dry etched to form a 42 micron mesa that is subsequently wet oxidized to form apertures...

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Published inIEEE/LEOS Summer Topi All-Optical Networking: Existing and Emerging Architecture and Applications/Dynamic Enablers of Next-Generation Optical Communications Systems/Fast Optical Processing in Optical p. TuH3
Main Authors Murray, C.S., Newman, F.D., Shangzhu Sun, Clevenger, J.B., Bossert, D.J., Wang, C.X., Hou, H.Q., Stall, R.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2002
Subjects
Apertures
Chemical lasers
Chemical vapor deposition
Dry etching
Gallium arsenide
Laser modes
MOCVD
Surface emitting lasers
Vertical cavity surface emitting lasers
Wet etching
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Summary:Summary form only given. An Emcore D 180 metalorganic chemical vapor deposition (MOCVD) system was used to develop 1.3 micron InGaAsN/GaAs vertical cavity surface emitting lasers (VCSELs). The InGaAsN VCSELs are dry etched to form a 42 micron mesa that is subsequently wet oxidized to form apertures ranging from 6.0 to 8.5 microns. The quasi-single mode laser was modulated with a pseudorandom bit sequence at 2.5 Gbit/sec at room temperature.
ISBN:9780780373785
0780373782
ISSN:1099-4742
2376-8614
DOI:10.1109/LEOSST.2002.1027610