Design of Hole-Blocking and Electron-Blocking Layers in AlxGa1-xN-Based UV Light-Emitting Diodes
The band-engineered structure design for electron-blocking layer (EBL) and hole-blocking layer (HBL) in Al x Ga 1-x N-based ultraviolet light-emitting diodes (UV LEDs) is performed and analyzed theoretically. Simulation results show that the severe polarization effect is efficiently mitigated and th...
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Published in | IEEE transactions on electron devices Vol. 63; no. 3; pp. 1141 - 1147 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
IEEE
01.03.2016
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Subjects | |
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Abstract | The band-engineered structure design for electron-blocking layer (EBL) and hole-blocking layer (HBL) in Al x Ga 1-x N-based ultraviolet light-emitting diodes (UV LEDs) is performed and analyzed theoretically. Simulation results show that the severe polarization effect is efficiently mitigated and the downward-bended band profile of the EBL is improved when the EBL is designed with a graded-composition and multiquantum barrier (GMQB) structure. As a result, the capabilities of both electron confinement and hole injection, and also the light output power are promoted. On the contrary, for the HBL, the design of composition graded and/or multiquantum barrier structures reduces the effective potential barrier height for holes in the valence band and, consequently, causes a considerable hole overflow. The UV LED, thus, exhibits superior optical performance when the LED structure is simultaneously designed with a GMQB EBL and a bulk HBL. |
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AbstractList | The band-engineered structure design for electron-blocking layer (EBL) and hole-blocking layer (HBL) in Al x Ga 1-x N-based ultraviolet light-emitting diodes (UV LEDs) is performed and analyzed theoretically. Simulation results show that the severe polarization effect is efficiently mitigated and the downward-bended band profile of the EBL is improved when the EBL is designed with a graded-composition and multiquantum barrier (GMQB) structure. As a result, the capabilities of both electron confinement and hole injection, and also the light output power are promoted. On the contrary, for the HBL, the design of composition graded and/or multiquantum barrier structures reduces the effective potential barrier height for holes in the valence band and, consequently, causes a considerable hole overflow. The UV LED, thus, exhibits superior optical performance when the LED structure is simultaneously designed with a GMQB EBL and a bulk HBL. |
Author | Fang-Ming Chen Jih-Yuan Chang Wei-Chih Lai Ya-Hsuan Shih Yen-Kuang Kuo Jinn-Kong Sheu Ming-Lun Lee |
Author_xml | – sequence: 1 surname: Ya-Hsuan Shih fullname: Ya-Hsuan Shih organization: Dept. of PhotonicsAdvanced Optoelectron. Technol. Center, Nat. Cheng Kung Univ., Tainan, Taiwan – sequence: 2 surname: Jih-Yuan Chang fullname: Jih-Yuan Chang organization: Center for Teacher Educ., Nat. Changhua Univ. of Educ., Changhua, Taiwan – sequence: 3 surname: Jinn-Kong Sheu fullname: Jinn-Kong Sheu email: jksheu@mail.ncku.edu.tw organization: Dept. of PhotonicsAdvanced Optoelectron. Technol. Center, Nat. Cheng Kung Univ., Tainan, Taiwan – sequence: 4 surname: Yen-Kuang Kuo fullname: Yen-Kuang Kuo organization: Dept. of PhysicsInstitute of Photonics, Nat. Changhua Univ. of Educ., Changhua, Taiwan – sequence: 5 surname: Fang-Ming Chen fullname: Fang-Ming Chen organization: Inst. of Photonics, Nat. Changhua Univ. of Educ., Changhua, Taiwan – sequence: 6 surname: Ming-Lun Lee fullname: Ming-Lun Lee organization: Dept. of Electro-Opt. Eng., Southern Taiwan Univ. of Sci. & Technol., Tainan, Taiwan – sequence: 7 surname: Wei-Chih Lai fullname: Wei-Chih Lai organization: Dept. of PhotonicsAdvanced Optoelectron. Technol. Center, Nat. Cheng Kung Univ., Tainan, Taiwan |
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Keywords | ultraviolet (UV) hole-blocking layer (HBL) Electron-blocking layer (EBL) light-emitting diodes (LEDs) |
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Snippet | The band-engineered structure design for electron-blocking layer (EBL) and hole-blocking layer (HBL) in Al x Ga 1-x N-based ultraviolet light-emitting diodes... |
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SubjectTerms | Charge carrier processes Current density Electron-blocking layer (EBL) hole-blocking layer (HBL) Leakage currents Light emitting diodes light-emitting diodes (LEDs) Photonic band gap Power generation Simulation ultraviolet (UV) |
Title | Design of Hole-Blocking and Electron-Blocking Layers in AlxGa1-xN-Based UV Light-Emitting Diodes |
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