Design of Hole-Blocking and Electron-Blocking Layers in AlxGa1-xN-Based UV Light-Emitting Diodes
The band-engineered structure design for electron-blocking layer (EBL) and hole-blocking layer (HBL) in Al x Ga 1-x N-based ultraviolet light-emitting diodes (UV LEDs) is performed and analyzed theoretically. Simulation results show that the severe polarization effect is efficiently mitigated and th...
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Published in | IEEE transactions on electron devices Vol. 63; no. 3; pp. 1141 - 1147 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
IEEE
01.03.2016
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Subjects | |
Online Access | Get full text |
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Summary: | The band-engineered structure design for electron-blocking layer (EBL) and hole-blocking layer (HBL) in Al x Ga 1-x N-based ultraviolet light-emitting diodes (UV LEDs) is performed and analyzed theoretically. Simulation results show that the severe polarization effect is efficiently mitigated and the downward-bended band profile of the EBL is improved when the EBL is designed with a graded-composition and multiquantum barrier (GMQB) structure. As a result, the capabilities of both electron confinement and hole injection, and also the light output power are promoted. On the contrary, for the HBL, the design of composition graded and/or multiquantum barrier structures reduces the effective potential barrier height for holes in the valence band and, consequently, causes a considerable hole overflow. The UV LED, thus, exhibits superior optical performance when the LED structure is simultaneously designed with a GMQB EBL and a bulk HBL. |
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ISSN: | 0018-9383 1557-9646 |
DOI: | 10.1109/TED.2016.2520998 |