Terahertz monolithic integrated circuits based on metamorphic HEMT technology for sensors and communication

• Published in: 2013 Asia-Pacific Microwave Conference Proceedings (APMC) pp. 203 - 205
• Main Authors: Tessmann, Axel, Schlechtweg, Michael, Bruch, Daniel, Lewark, Ulrich J., Leuther, Arnulf, Massler, Hermann, Wagner, Sandrine, Seelmann-Eggebert, Matthias, Hurm, Volker, Aidam, Rolf, Kallfass, Ingmar, Ambacher, Oliver
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.11.2013
• Subjects: amplifier; Frequency measurement; frequency multiplier; Logic gates; metamorphic high electron mobility transistor (mHEMT); mHEMTs; millimeter-wave monolithic integrated circuit (MMIC); MODFETs; Power generation; Semiconductor device measurement; terahertz monolithic integrated circuit (TMIC)

For the next generation of sensors and communication systems operating at frequencies up to 600 GHz and above, the Fraunhofer IAF is developing a broad variety of millimeter-wave and terahertz monolithic integrated circuits (MMICs and TMICs) and modules. The monolithic integrated circuits are realiz...