Terahertz monolithic integrated circuits based on metamorphic HEMT technology for sensors and communication

For the next generation of sensors and communication systems operating at frequencies up to 600 GHz and above, the Fraunhofer IAF is developing a broad variety of millimeter-wave and terahertz monolithic integrated circuits (MMICs and TMICs) and modules. The monolithic integrated circuits are realiz...

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Published in2013 Asia-Pacific Microwave Conference Proceedings (APMC) pp. 203 - 205
Main Authors Tessmann, Axel, Schlechtweg, Michael, Bruch, Daniel, Lewark, Ulrich J., Leuther, Arnulf, Massler, Hermann, Wagner, Sandrine, Seelmann-Eggebert, Matthias, Hurm, Volker, Aidam, Rolf, Kallfass, Ingmar, Ambacher, Oliver
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.11.2013
Subjects
amplifier
Frequency measurement
frequency multiplier
Logic gates
metamorphic high electron mobility transistor (mHEMT)
mHEMTs
millimeter-wave monolithic integrated circuit (MMIC)
MODFETs
Power generation
Semiconductor device measurement
terahertz monolithic integrated circuit (TMIC)
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Summary:For the next generation of sensors and communication systems operating at frequencies up to 600 GHz and above, the Fraunhofer IAF is developing a broad variety of millimeter-wave and terahertz monolithic integrated circuits (MMICs and TMICs) and modules. The monolithic integrated circuits are realized using the advanced metamorphic high electron mobility transistor (mHEMT) technology in the InGaAs/InAlAs material system on 4" GaAs substrates. The potential of this technology is demonstrated in this paper by two TMICs operating at 600 GHz: a high-gain amplifier and an active frequency multiplier-by-six.
ISSN:2165-4727
2165-4743
DOI:10.1109/APMC.2013.6695094