Modelling of the Laser Dynamics of an (Al,In)GaN Laser Diode

(Al,In)GaN laser diodes show an intricate interplay of longitudinal mode competition and mode clustering. So far, modelling of these diodes has been restricted to rate equations, necessitating the input of a variety of phenomenological parameters. Here, we perform calculations based on the semicondu...

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Bibliographic Details
Published in2018 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) pp. 107 - 108
Main Authors Thranhardt, Angela, Kuhn, Eduard, Uhlig, Lukas, Wachs, Matthias, Schwarz, Ulrich T.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.11.2018
Subjects
Diode lasers
Laser modes
Laser theory
Mathematical model
Microscopy
Numerical models
physics computing
quantum well lasers
Semiconductor lasers
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Summary:(Al,In)GaN laser diodes show an intricate interplay of longitudinal mode competition and mode clustering. So far, modelling of these diodes has been restricted to rate equations, necessitating the input of a variety of phenomenological parameters. Here, we perform calculations based on the semiconductor Bloch equations which offer the chance of a full many-body calculation and microscopic determination of all parameters. In the current contribution, we restrict our calculations to basic mechanisms and use phenomenological parameters for numerical reasons. Even in this simple model, we are able to reproduce the mode rolling phenomena found in measurements and gain access to parameters not accessible in a rate equation model.
ISSN:2158-3242
DOI:10.1109/NUSOD.2018.8570238