Small current unclamped inductive switching (UIS) to detect fabrication defect for mass-production phase IGBT

In Unclamped Inductive Switching (UIS) with a small capacitance, the L load current flows into the breakdown point selectively. Vava, which is a peak voltage during this UIS turn-off, is also widely changed by the ON state forward voltage drop Von. Along this Von index, two types of failure modes ar...

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Bibliographic Details
Published in2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD) pp. 116 - 119
Main Authors Sano, Kazuya, Matsushita, Yukio, Yachi, Megumi, Nakata, Yoji, Ide, Keiichiro, Yoshida, Daisaku, Kudo, Tomohito, Ata, Yasuo, Haruguchi, Hideki, Soneda, Shinya, Minato, Tadaharu
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2018
Subjects
Capacitance
Electric breakdown
Fabrication
IGBT
Insulated gate bipolar transistors
Integrated circuits
Switches
Unclamped Inductive Switching (UIS)
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Summary:In Unclamped Inductive Switching (UIS) with a small capacitance, the L load current flows into the breakdown point selectively. Vava, which is a peak voltage during this UIS turn-off, is also widely changed by the ON state forward voltage drop Von. Along this Von index, two types of failure modes are detected. One is the weak point of the design and the other is the fabrication defect. Our proposing UIS is one of the most effective approaches to detect the fabrication defects instead of the huge current class module test like an SCSOA. And also Von is one of the major controlling factors of UIS capability other than the index of power loss.
ISSN:1946-0201
DOI:10.1109/ISPSD.2018.8393616