Photo Misalignment Impact on the Hot Carrier Reliability of Lateral DMOS Devices

Power management devices often require operation in the 20 V to 30 V range. A common choice for the power MOS driver is an n-channel lateral DMOS (N-LDMOS) device. An advantage of N-LDMOS device is that it can easily be integrated within existing technologies to handle a wide range of operating volt...

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Bibliographic Details
Published in2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual pp. 498 - 502
Main Authors Brisbin, D., Lindorfer, P., Chaparala, P.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.04.2007
Subjects
Application specific integrated circuits
CMOS technology
Degradation
Displays
Driver circuits
Energy management
Hot carriers
Semiconductor device reliability
Switches
Threshold voltage
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Summary:Power management devices often require operation in the 20 V to 30 V range. A common choice for the power MOS driver is an n-channel lateral DMOS (N-LDMOS) device. An advantage of N-LDMOS device is that it can easily be integrated within existing technologies to handle a wide range of operating voltages without significant process changes. Because of the high voltages applied to the N-LDMOS device hot carrier (HC) degradation is a real reliability concern. In high power applications N-LDMOS devices are often implemented in transistor arrays where the basic cell is a dual gate single drain device. This paper focuses on understanding unusual N-LDMOS HC results in which single gate devices had significantly better HC performance than dual gate devices.
ISBN:9781424409181
1424409187
ISSN:1541-7026
1938-1891
DOI:10.1109/RELPHY.2007.369941