Photo Misalignment Impact on the Hot Carrier Reliability of Lateral DMOS Devices
Power management devices often require operation in the 20 V to 30 V range. A common choice for the power MOS driver is an n-channel lateral DMOS (N-LDMOS) device. An advantage of N-LDMOS device is that it can easily be integrated within existing technologies to handle a wide range of operating volt...
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Published in | 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual pp. 498 - 502 |
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Main Authors | , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.04.2007
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Subjects | |
Online Access | Get full text |
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Summary: | Power management devices often require operation in the 20 V to 30 V range. A common choice for the power MOS driver is an n-channel lateral DMOS (N-LDMOS) device. An advantage of N-LDMOS device is that it can easily be integrated within existing technologies to handle a wide range of operating voltages without significant process changes. Because of the high voltages applied to the N-LDMOS device hot carrier (HC) degradation is a real reliability concern. In high power applications N-LDMOS devices are often implemented in transistor arrays where the basic cell is a dual gate single drain device. This paper focuses on understanding unusual N-LDMOS HC results in which single gate devices had significantly better HC performance than dual gate devices. |
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ISBN: | 9781424409181 1424409187 |
ISSN: | 1541-7026 1938-1891 |
DOI: | 10.1109/RELPHY.2007.369941 |