Effects of Liner Thickness on the Reliability of AgTe/TiO2-Based Threshold Switching Devices

• Published in: IEEE transactions on electron devices Vol. 64; no. 11; pp. 4763 - 4767
• Main Authors: Jeonghwan Song, Jiyong Woo, Jongmyung Yoo, Chekol, Solomon Amsalu, Seokjae Lim, Changhyuck Sung, Hyunsang Hwang
• Format: Journal Article
• Language: English
• Published: IEEE 01.11.2017
• Subjects: Annealing; Cross-point memory array; Resistance; selector device; Switches; Thermal stability; threshold switching (TS); Threshold voltage
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/TED.2017.2747589

The effects of liner thickness on the reliability of AgTe/TiO 2 -based threshold switching (TS) devices were investigated. The off-state current of an AgTe/TiO 2 /Pt TS device was found to be significantly increased by in-diffusion of Ag into the TiO 2 layer during the annealing process. Therefore, 3-, 5- and 7-nm TiN liners were introduced and compared to prevent the in-diffusion of Ag. While the 3-nm TiN liner was shown to be incapable of blocking Ag in-diffusion into the TiO 2 layer, the 5- and 7-nm liners effectively suppressed in-diffusion and maintained high off-state resistance. However, the TS device with the 7-nm TiN liner exhibited wide threshold voltage distribution and poor endurance characteristics owing to a lack of Ag sources. The TS device with a 5-nm TiN liner, by contrast, was found to have an adequate amount of Ag sources and to demonstrate thermally stable and electrically reliable characteristics. The effects of TiN liner on Ag diffusion were also directly confirmed using energy dispersive spectrometry line profiles, transmission electron microscopy imaging, and mapping analyses.