C-band 340-W and X-band 100-W GaN power amplifiers with over 50-% PAE

In this paper, we report a C-band power amplifier with over 340-W output power using 0.8-mum GaN-HEMTs and an X-band power amplifier with over 100-W output power using 0.25-mum GaN-HEMTs. We used two-chip configurations and the three-stage impedance transformers to extend the bandwidth for both circ...

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Bibliographic Details
Published in2009 IEEE MTT-S International Microwave Symposium Digest pp. 1265 - 1268
Main Authors Shigematsu, H., Inoue, Y., Akasegawa, A., Yamada, M., Masuda, S., Kamada, Y., Yamada, A., Kanamura, M., Ohki, T., Makiyama, K., Okamoto, N., Imanishi, K., Kikkawa, T., Joshin, K., Hara, N.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2009
Subjects
Broadband amplifiers
C-band
Dielectric substrates
Gallium nitride
GaN
High power amplifiers
Impedance
PAE
Power amplifiers
Power generation
Radar applications
Spaceborne radar
Transformers
X-band
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Summary:In this paper, we report a C-band power amplifier with over 340-W output power using 0.8-mum GaN-HEMTs and an X-band power amplifier with over 100-W output power using 0.25-mum GaN-HEMTs. We used two-chip configurations and the three-stage impedance transformers to extend the bandwidth for both circuits. The input and output lines adjacent to each chip are divided by four to suppress the non-uniform heat distribution in a chip at high frequencies. As a result, we obtained 343-W output power and 53-% power added efficiency (PAE) at 4.8 GHz. This is the highest output power ever reported C-band power amplifiers. We also obtained 101-W output power and 53-% PAE at 9.8 GHz. This is also the highest PAE ever reported X-band power amplifiers with over 50-W output power.
ISBN:1424428033
9781424428038
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.2009.5165934