Characterization of Si3N4 Metal-Insulator-Metal (MIM) Capacitors for Monolithic Microwave Integrated Circuits (MMIC) Applications

The fabrication of the MIM capacitors is illustrated in the paper. The effective capacitor areas are designed at 60 × 60, 240 × 240 and 380 × 380 μm 2 . From the s-parameter measurements, the fabricated capacitors showed capacitive capability up to frequency of 40GHz. Strong parasitic effect was obs...

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Bibliographic Details
Published in2006 IEEE International Conference on Semiconductor Electronics pp. 515 - 519
Main Authors Lee Hock Guan, Osman, M.N., Dolah, A., Rahim, A.I.A., Yahya, M.R., Mat, A.F.A.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.11.2006
Subjects
Application specific integrated circuits
Attenuation
Fabrication
Frequency measurement
Integrated circuit measurements
Metal-insulator structures
Microwave integrated circuits
MIM capacitors
MMICs
Monolithic integrated circuits
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Summary:The fabrication of the MIM capacitors is illustrated in the paper. The effective capacitor areas are designed at 60 × 60, 240 × 240 and 380 × 380 μm 2 . From the s-parameter measurements, the fabricated capacitors showed capacitive capability up to frequency of 40GHz. Strong parasitic effect was observed at low frequency while attenuation effect was observed at high frequency.
ISBN:9780780397309
0780397304
DOI:10.1109/SMELEC.2006.380683