Some possibilities for determining the depth of the p-n junction and profiles of semiconductor layers

Electrochemical capacitance-voltage (ECV) techniques and the four-point probe method have been used to determine the carrier profile N(x) and the depth of the p/sup +/-n junction of a boron implanted silicon wafer. It was found that the p/sup +/-n junction depth can provide reliable information only...

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Bibliographic Details
Published inThe Fourth International Conference on Advanced Semiconductor Devices and Microsystem pp. 111 - 114
Main Authors Hulenyi, L., Kinder, R.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2002
Subjects
Boron
Capacitance
Contacts
Electrical resistance measurement
Integrated circuit reliability
P-n junctions
Probes
Silicon
Strontium
Voltage
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Summary:Electrochemical capacitance-voltage (ECV) techniques and the four-point probe method have been used to determine the carrier profile N(x) and the depth of the p/sup +/-n junction of a boron implanted silicon wafer. It was found that the p/sup +/-n junction depth can provide reliable information only if certain limitations are considered in detail. The results obtained by ECV were compared with those computed by SUPREM.
ISBN:078037276X
9780780372764
DOI:10.1109/ASDAM.2002.1088488