Anomalous charge loss of reference cell in MLC flash memory due to process-induced mobile ion

This paper reports an anomalous charge loss observed from the reference cell of MLC flash memory induced by the cobalt salicide process. The reference cell is shown to exhibit unique retention behavior different from that of the normal array cell. Both the source and mechanism of the enhanced charge...

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Published inProceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005 pp. 321 - 324
Main Authors Sang-Pil Sim, Wook Hyun Kwon, Heon Kyu Lee, Jee Hoon Han, Seung Boo Jeon, Bong Yong Lee, Jae Hoon Kim, Jung In Han, Byoung Moon Yoon, Lee, W.H., Chan-Kwang Park, Kinam Kim
Format Conference Proceeding
LanguageEnglish
Published IEEE 2005
Subjects
Cobalt
Consumer electronics
Flash memory
Mobile communication
Moon
Protection
Research and development
Semiconductor memory
Stability
Testing
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Summary:This paper reports an anomalous charge loss observed from the reference cell of MLC flash memory induced by the cobalt salicide process. The reference cell is shown to exhibit unique retention behavior different from that of the normal array cell. Both the source and mechanism of the enhanced charge loss therein are investigated through various bake tests, mobile ion analysis, and structural analysis. A simple yet effective way to protect the reference cell from the process-induced mobile ions is proposed.
ISBN:0780392035
9780780392038
ISSN:1930-8876
DOI:10.1109/ESSDER.2005.1546650