Improved Resistive Switching Behavior in Solution-processed AlOx based RRAM

• Published in: 2019 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS) pp. 1 - 4
• Main Authors: Qi, Y F, Zhao, C Z, Zhao, C, Mitrovic, I Z, Xu, W Y, Yang, L, Shen, Z J, He, J H
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.04.2019
• Subjects: ALD; Aluminum Oxide; Resistive Switching; RRAM; Solution-processed
• ISSN: 2472-9132
• DOI: 10.1109/EUROSOI-ULIS45800.2019.9041862

In this study, a comprehensive comparison in light of the switching behavior has been made to the AlO x dielectrics in Resistive Random Access Memory (RRAM) devices, which were fabricated with solution-processed (SP) and atomic-layer-deposition (ALD) based techniques under the same temperature (250°C). The improved resistive switching properties such as smaller Vset/Vreset (1.2~1.8 V/−0.9~−1.3 V), a narrower RHRs/RLRs distribution (2~80 k Ω /0.8~1 k Ω) and a higher resistance ratio (8~230) under 5 mA compliance current (CC) have been achieved with SP method. The conduction mechanisms of the ON and OFF state for both devices are the ohmic conduction and Frenkel-Poole emission, respectively. Therefore, the solution-based fabrication method has the potential application for the flexible memory, due to the fabrication merits of the low-temperature, low cost, large area implementation and being environmental-friendly.