Technology related issues regarding fabrication of AlGaN/GaN-based MOSHFETs with GdScO3 as dielectric

Starting out from our well established process for AlGaN/GaN HFETs, the authors discuss ways to enrich the process in order to fabricate metal-oxide-semiconductor HFETs (MOSHFETs) with a gadolinium scandate (GdScO 3 ) insulation layer. In particular, adequate processing orders, various etching proce...

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Bibliographic Details
Published in2006 International Conference on Advanced Semiconductor Devices and Microsystems pp. 241 - 244
Main Authors Heidelberger, G., Roeckerath, M., Steins, R., Stefaniak, M., Fox, A., Schubert, J., Kaluza, N., Marso, M., Luth, H., Kordos, P.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.10.2006
Subjects
Aluminum gallium nitride
Dielectrics and electrical insulation
Etching
Fabrication
Gallium nitride
HEMTs
Leakage current
MODFETs
MOSHFETs
Ohmic contacts
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Summary:Starting out from our well established process for AlGaN/GaN HFETs, the authors discuss ways to enrich the process in order to fabricate metal-oxide-semiconductor HFETs (MOSHFETs) with a gadolinium scandate (GdScO 3 ) insulation layer. In particular, adequate processing orders, various etching procedures and possible drawbacks of the GdScO 3 deposition process on ohmic contacts are discussed. Making use of the gained knowledge, the authors fabricated GdScO 3 -MOSHFETs for the first time. Compared to a conventional HFET the new device shows a higher saturation drain current and a lower gate leakage current. Nevertheless, the potential insulating properties of GdScO 3 are not fully exploited yet and further optimization of the deposition process is needed
DOI:10.1109/ASDAM.2006.331198