Design of a GaN HEMT power amplifier using resistive loaded harmonic tuning

The proper termination of the 2 nd harmonic impedance is the basic task during the design of a harmonically tuned power amplifier. In addition to several approaches of defining fundamental and harmonic pairs with purely reactive harmonics, the harmonic components can be terminated resistive as well....

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Bibliographic Details
Published in2014 44th European Microwave Conference pp. 1496 - 1499
Main Authors Preis, Sebastian, Zihui Zhang, Arnous, Mhd Tareq
Format Conference Proceeding
LanguageEnglish
Published European Microwave Association 01.10.2014
Subjects
Bandwidth
broadband amplifier
Gallium nitride
Harmonic analysis
harmonic tuning
HEMT
Microwave amplifiers
Microwave circuits
power amplifier
Power amplifiers
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Summary:The proper termination of the 2 nd harmonic impedance is the basic task during the design of a harmonically tuned power amplifier. In addition to several approaches of defining fundamental and harmonic pairs with purely reactive harmonics, the harmonic components can be terminated resistive as well. This work presents a broadband GaN HEMT power amplifier with resistive 2 nd harmonic termination. The measured output power of 41.1 to 42.6 dBm was achieved covering a frequency range from 2.2 to 2.7 GHz. The drain efficiency of the amplifier ranged from 66.2 to 75.2 percent. Applying a LTE signal with 10 MHz bandwidth, a linearized average efficiency of 42 % was attained.
DOI:10.1109/EuMC.2014.6986732