An Investigation of Abnormal Program Phenomena with S/D Junctions and Dopant Profiles for Sub-20 nm NAND Flash Memory Devices

In this paper, we discuss about the abnormal program phenomena of sub-20 nm NAND Flash memory devices based on floating gates. These phenomena are varied with the doping concentration and isolations. In sub-20 nm NAND technology, the optimized S/D junction and well-controlled dopant profiles under c...

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Bibliographic Details
Published in2012 4th IEEE International Memory Workshop pp. 1 - 4
Main Authors Byoungjun Park, Sunghoon Cho, Jiyul Park, Pyunghwa Kim, Sangjo Lee, Milim Park, Min Sang Park, Sukkwang Park, Hae Chang Yang, Sungjo Park, Yunbong Lee, Myoung Kwan Cho, Kun-Ok Ahn, Gihyun Bae, Sungwook Park
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2012
Subjects
Boosting
Capacitance
Doping
Electric potential
Flash memory
Junctions
Nonvolatile memory
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Summary:In this paper, we discuss about the abnormal program phenomena of sub-20 nm NAND Flash memory devices based on floating gates. These phenomena are varied with the doping concentration and isolations. In sub-20 nm NAND technology, the optimized S/D junction and well-controlled dopant profiles under channel should be adopted to improve reliability characteristics.
ISBN:9781467310796
1467310794
ISSN:2159-483X
DOI:10.1109/IMW.2012.6213622