A novel model for an integrated rf CMOS schottky diode

In this paper an interdigital n-type CoSi 2 -Si Schottky diode is fabricated in SMIC 0.18 mum RF CMOS process. A novel and accurate Schottky diode model has been developed base on the DC and RF measured data. In this novel model the losses due to parasitic capacitance dielectric and metal plate are...

Full description

Saved in:
Bibliographic Details
Published in2007 7th International Conference on ASIC pp. 1138 - 1141
Main Authors Wang, Xi-Ning, Bin, Zhu, Su, Jian-Kun, Lee, Ting-Huang, Yang, Li-Wu
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.10.2007
Subjects
Charge pumps
CMOS process
Dielectric losses
Dielectric measurements
Frequency measurement
Modeling
Parasitic capacitance
Radio frequency
RF CMOS
RFID
Schottky diode
Schottky diodes
Semiconductor device modeling
Voltage
Online AccessGet full text

Cover

More Information
Summary:In this paper an interdigital n-type CoSi 2 -Si Schottky diode is fabricated in SMIC 0.18 mum RF CMOS process. A novel and accurate Schottky diode model has been developed base on the DC and RF measured data. In this novel model the losses due to parasitic capacitance dielectric and metal plate are considered. It is shown that the suggested novel model fits the measurement very well for different voltage biases over the wide frequency range of 0.05 GHz to 8.5 GHz. A type of four stages charge pump is designed using this new Schottky diode model, the design charge pump can get efficiency of 40%.
ISBN:1424411319
9781424411313
ISSN:2162-7541
2162-755X
DOI:10.1109/ICASIC.2007.4415834