A MEMS-based temperature-compensated vacuum sensor for low-power monolithic integration

This paper presents a MEMS resonator-based vacuum sensor with a low-power transimpedance amplifier and a mixer-based frequency-to-digital converter. The MEMS resonator is fabricated in a CMOS-compatible process, and a 130 nm CMOS technology is used to design the integrated circuitry. The vacuum sens...

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Bibliographic Details
Published in2010 IEEE International Symposium on Circuits and Systems (ISCAS) pp. 3276 - 3279
Main Authors Taghvaei, M A, Cicek, P.-V, Allidina, K, Nabki, F, El-Gamal, M N
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2010
Subjects
Circuit simulation
CMOS process
CMOS technology
Digital-to-frequency converters
Energy consumption
Frequency conversion
Integrated circuit technology
Micromechanical devices
Monolithic integrated circuits
Temperature sensors
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Summary:This paper presents a MEMS resonator-based vacuum sensor with a low-power transimpedance amplifier and a mixer-based frequency-to-digital converter. The MEMS resonator is fabricated in a CMOS-compatible process, and a 130 nm CMOS technology is used to design the integrated circuitry. The vacuum sensor operates in the pressure range from 10 to 1200 mbar with a resolution of ~2 mbar. The system is temperature-compensated between -10°C and 60°C. The simulated power consumption of the entire system is less than 495 μW from a 1 V supply.
ISBN:1424453089
9781424453085
ISSN:0271-4302
2158-1525
DOI:10.1109/ISCAS.2010.5537914