Ultra low-power filter bank for hearing aid speech processor

An ultra-low power sub-threshold Finite Impulse Response (FIR) filter bank for hearing aid applications is demonstrated in 65nm CMOS technology. The system has a 2kb Static Random Access Memory (SRAM) interface optimized for sub-threshold operation. The system operates at 0.3V sub-threshold regime a...

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Bibliographic Details
Published in2012 IEEE Subthreshold Microelectronics Conference pp. 1 - 3
Main Authors Kwen-Siong Chong, Barangi, M., Jaeyoung Kim, Chang, J. S., Mazumder, P.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.10.2012
Subjects
channel bank
Channel bank filters
Clocks
Computer architecture
dynamic power
Filter banks
Finite impulse response filter
FIR filter
leakage power
Microprocessors
Random access memory
SRAM
sub-threshold
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ISBN1467315869
9781467315869
DOI10.1109/SubVT.2012.6404314

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Summary:An ultra-low power sub-threshold Finite Impulse Response (FIR) filter bank for hearing aid applications is demonstrated in 65nm CMOS technology. The system has a 2kb Static Random Access Memory (SRAM) interface optimized for sub-threshold operation. The system operates at 0.3V sub-threshold regime and consumes 10.4 μW at 0.96MHz clock frequency which corresponds to merely 0.6nJ per FIR operation.
ISBN:1467315869
9781467315869
DOI:10.1109/SubVT.2012.6404314