Behavioral Modeling of The pH-ISFET Temperature Influence

In this paper, behavioral modeling of the temperature influence on the pH-ISFET response has been presented by using Orcad PSPICE simulator and Matlab software. This model was based on the so-called site-binding model and the level 3 of PSPICE model of MOSFET. It takes into account the dependence wi...

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Bibliographic Details
Published in2007 14th IEEE International Conference on Electronics, Circuits and Systems pp. 419 - 422
Main Authors Hajji, B., Naimi, S.E., Humenyuk, I., Launay, J., Temple-Boyer, P.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.12.2007
Subjects
Biomembranes
Circuit simulation
Electrodes
Insulation
Mathematical model
MOSFET circuits
SPICE
Temperature dependence
Temperature sensors
Virtual colonoscopy
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Summary:In this paper, behavioral modeling of the temperature influence on the pH-ISFET response has been presented by using Orcad PSPICE simulator and Matlab software. This model was based on the so-called site-binding model and the level 3 of PSPICE model of MOSFET. It takes into account the dependence with temperature of the dissociation constants ka, kb at the SiO2/Si3N4 electrolyte/insulator interface. The implemented model was tested at different temperatures on a large pH range, evidencing a good fit between simulation results and experimental data.
ISBN:142441377X
9781424413775
DOI:10.1109/ICECS.2007.4511019