Behavioral Modeling of The pH-ISFET Temperature Influence
In this paper, behavioral modeling of the temperature influence on the pH-ISFET response has been presented by using Orcad PSPICE simulator and Matlab software. This model was based on the so-called site-binding model and the level 3 of PSPICE model of MOSFET. It takes into account the dependence wi...
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Published in | 2007 14th IEEE International Conference on Electronics, Circuits and Systems pp. 419 - 422 |
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Main Authors | , , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.12.2007
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Subjects | |
Online Access | Get full text |
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Summary: | In this paper, behavioral modeling of the temperature influence on the pH-ISFET response has been presented by using Orcad PSPICE simulator and Matlab software. This model was based on the so-called site-binding model and the level 3 of PSPICE model of MOSFET. It takes into account the dependence with temperature of the dissociation constants ka, kb at the SiO2/Si3N4 electrolyte/insulator interface. The implemented model was tested at different temperatures on a large pH range, evidencing a good fit between simulation results and experimental data. |
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ISBN: | 142441377X 9781424413775 |
DOI: | 10.1109/ICECS.2007.4511019 |