A large-signal model of RF LDMOS with skin effects of power combining structures

An empirical large signal model is presented to have good accuracy for all the device operating regions up to 20 GHz. Skin effects of combining structures, non-reciprocal capacitance, and non-quasi-static effect are considered in this model. A power transistor of 1.92 mm gate width is modeled and co...

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Bibliographic Details
Published in2005 IEEE Radio Frequency integrated Circuits (RFIC) Symposium - Digest of Papers pp. 149 - 152
Main Authors Jeonghu Han, Changkun Park, Donghyun Baek, Kyoungmin Koh, Juhyun Ko, Ilhun Shon, Songcheol Hong
Format Conference Proceeding
LanguageEnglish
Published IEEE 2005
Subjects
Capacitance
CMOS process
MOSFET circuits
Power measurement
Power system modeling
Power transistors
Radio frequency
Semiconductor device modeling
Skin
Threshold voltage
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Summary:An empirical large signal model is presented to have good accuracy for all the device operating regions up to 20 GHz. Skin effects of combining structures, non-reciprocal capacitance, and non-quasi-static effect are considered in this model. A power transistor of 1.92 mm gate width is modeled and compared with measured data. P1dB of 20 dBm, 19 dB gain and 62 % PAE at P1dB in P/sub in/-P/sub out/ properties are exactly predicted by the model.
ISBN:9780780389830
0780389832
ISSN:1529-2517
2375-0995
DOI:10.1109/RFIC.2005.1489614