Molecular dynamics simulation on LO phonon mode decay in Si nano-structure covered with oxide films

A series of molecular dynamics (MD) simulations is conducted to investigate the dynamics of longitudinal optical (LO) phonon in Si nano-structure confined with oxide films. This work is motivated by heat issues in nanoscopic devices; it is considered that the LO phonons with low group velocity are a...

Full description

Saved in:
Bibliographic Details
Published in2010 International Conference on Simulation of Semiconductor Processes and Devices pp. 73 - 76
Main Authors Zushi, T, Ohdomari, I, Watanabe, T, Kamakura, Y, Taniguchi, K
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.09.2010
Subjects
Acoustics
Heating
Lattices
Nanoscale devices
Phonons
Silicon
Online AccessGet full text

Cover

More Information
Summary:A series of molecular dynamics (MD) simulations is conducted to investigate the dynamics of longitudinal optical (LO) phonon in Si nano-structure confined with oxide films. This work is motivated by heat issues in nanoscopic devices; it is considered that the LO phonons with low group velocity are accumulated in the nanoscopic device and the electric property deteriorates. We estimate the relaxation time of the LO phonon and investigate its dependency on the oxide thickness. The calculation results show that the LO phonon decays faster as the oxide thickness increases and turns into acoustic phonon. The result indicates that the presence of SiO 2 films promotes the scattering of the phonon and this is effective to diminish the optical phonon.
ISBN:1424477018
9781424477012
ISSN:1946-1569
1946-1577
DOI:10.1109/SISPAD.2010.5604568