A novel buffer structure and lifetime control technique with Poly-Si for thin wafer diode

A novel buffer structure for improving the trade-off between forward voltage and reverse recovery loss across the whole range of current density and realizing the softness during reverse recovery was developed. The structure named a ldquoBroad Buffers from Double Sides structurerdquo (BBDS) is compo...

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Bibliographic Details
Published in2009 21st International Symposium on Power Semiconductor Devices & IC's pp. 140 - 143
Main Authors Fujii, H., Inoue, M., Hatade, K., Tomomatsu, Y.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2009
Subjects
Anodes
Buffer layers
Cathodes
Conductivity
Current density
Diodes
Doping
Robustness
Thickness control
Voltage control
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Summary:A novel buffer structure for improving the trade-off between forward voltage and reverse recovery loss across the whole range of current density and realizing the softness during reverse recovery was developed. The structure named a ldquoBroad Buffers from Double Sides structurerdquo (BBDS) is composed a broad p- anode layer and a broad n- buffer layer. A novel technique called ldquoLocal Lifetime control technique with Poly-Si layerrdquo (LLP) was also developed. LLP controls the conductivity modulation level without introducing recombination centers in the n-layer. Combining these new techniques, namely, BBDS and LLP, made it possible, for the first time, to create a fast-recovery diode without the need to use conventional heavy-metal diffusion or irradiation methods.
ISBN:9781424435258
1424435250
ISSN:1063-6854
1946-0201
DOI:10.1109/ISPSD.2009.5158021