A novel buffer structure and lifetime control technique with Poly-Si for thin wafer diode
A novel buffer structure for improving the trade-off between forward voltage and reverse recovery loss across the whole range of current density and realizing the softness during reverse recovery was developed. The structure named a ldquoBroad Buffers from Double Sides structurerdquo (BBDS) is compo...
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Published in | 2009 21st International Symposium on Power Semiconductor Devices & IC's pp. 140 - 143 |
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Main Authors | , , , |
Format | Conference Proceeding |
Language | English |
Published |
IEEE
01.06.2009
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Subjects | |
Online Access | Get full text |
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Summary: | A novel buffer structure for improving the trade-off between forward voltage and reverse recovery loss across the whole range of current density and realizing the softness during reverse recovery was developed. The structure named a ldquoBroad Buffers from Double Sides structurerdquo (BBDS) is composed a broad p- anode layer and a broad n- buffer layer. A novel technique called ldquoLocal Lifetime control technique with Poly-Si layerrdquo (LLP) was also developed. LLP controls the conductivity modulation level without introducing recombination centers in the n-layer. Combining these new techniques, namely, BBDS and LLP, made it possible, for the first time, to create a fast-recovery diode without the need to use conventional heavy-metal diffusion or irradiation methods. |
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ISBN: | 9781424435258 1424435250 |
ISSN: | 1063-6854 1946-0201 |
DOI: | 10.1109/ISPSD.2009.5158021 |