Selenium segregation optimization for 10 nm node contact resistivity

Contact resistivity (ρ C ) reduction for n-SD (source/drain) with Se + implant was evaluated for different integration schemes. It is found that Se + implant energy is one of the most critical process parameters for ρ C improvement, achieved by placing the Se + peak close to silicide (TiSi 2 or NiPt...

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Bibliographic Details
Published inProceedings of Technical Program - 2014 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) pp. 1 - 2
Main Authors Ni, C-N, Rao, K. V., Khaja, F., Sharma, S., Zheng, B., Ramalingam, J., Gelatos, J., Lei, J., Chang, C-P, Mayur, A., Variam, N., Hung, R., Brand, A.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.04.2014
Subjects
Annealing
Implants
Lasers
Metals
Resistance
Silicides
Silicon
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Summary:Contact resistivity (ρ C ) reduction for n-SD (source/drain) with Se + implant was evaluated for different integration schemes. It is found that Se + implant energy is one of the most critical process parameters for ρ C improvement, achieved by placing the Se + peak close to silicide (TiSi 2 or NiPtSi)/Si interface and minimized implant damage. Recovery of implant damage to silicide and n-SD region was achieved with millisecond laser anneal, while minimizing dopant deactivation. This work demonstrated a viable integration pathway to realize low ρ C solution for n-SD for 10 nm node.
ISSN:1524-766X
2690-8174
DOI:10.1109/VLSI-TSA.2014.6839658