Novel microwave diode for millimeter waves on the base of asymmetrically doped semiconductor structure
Semiconductor structures with n + -n junction are promising candidates for microwaves detection in millimeter and submillimeter wavelengths region. Here we present experimental results of microwave detection in Ka frequency range using semiconductor structure with asymmetric doping of n-type GaAs se...
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Published in | 2016 46th European Microwave Conference (EuMC) pp. 1103 - 1106 |
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Main Authors | , , , , , |
Format | Conference Proceeding |
Language | English |
Published |
European Microwave Association
01.10.2016
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Subjects | |
Online Access | Get full text |
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Summary: | Semiconductor structures with n + -n junction are promising candidates for microwaves detection in millimeter and submillimeter wavelengths region. Here we present experimental results of microwave detection in Ka frequency range using semiconductor structure with asymmetric doping of n-type GaAs semiconductor at room temperature. |
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DOI: | 10.1109/EuMC.2016.7824540 |