Novel microwave diode for millimeter waves on the base of asymmetrically doped semiconductor structure

Semiconductor structures with n + -n junction are promising candidates for microwaves detection in millimeter and submillimeter wavelengths region. Here we present experimental results of microwave detection in Ka frequency range using semiconductor structure with asymmetric doping of n-type GaAs se...

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Bibliographic Details
Published in2016 46th European Microwave Conference (EuMC) pp. 1103 - 1106
Main Authors Suziedelis, Algirdas, Asmontas, Steponas, Gradauskas, Jonas, Gruzinskis, Viktoras, Lucun, Andzej, Cerskus, Aurimas
Format Conference Proceeding
LanguageEnglish
Published European Microwave Association 01.10.2016
Subjects
asymetrie doping
Electric fields
Etching
frequency dependence
Gallium arsenide
microwaves detection
Resistance
Schottky diodes
semiconductor structures
Sensitivity
voltage sensitivity
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Summary:Semiconductor structures with n + -n junction are promising candidates for microwaves detection in millimeter and submillimeter wavelengths region. Here we present experimental results of microwave detection in Ka frequency range using semiconductor structure with asymmetric doping of n-type GaAs semiconductor at room temperature.
DOI:10.1109/EuMC.2016.7824540