A Systematic Study on the Hysteresis Behaviour and Reliability of MoS2 FET

• Published in: 2017 30th International Conference on VLSI Design and 2017 16th International Conference on Embedded Systems (VLSID) pp. 437 - 440
• Main Authors: Meersha, Adil, Sathyajit, B., Shrivastava, Mayank
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.01.2017
• Subjects: Hysteresis; Logic gates; Molybdenum; Reliability; Sulfur; Temperature measurement; Voltage measurement

For reliable use of Molybdenum Disulfide (MoS2) FETs in ULSI applications device reliability issues like hysteresisbehaviour and non idealities must be well understood andmitigated. In this work, we present unique hysteresis behaviourin the I-V characteristics of few layer MoS 2 FETs. Root causeand...