A Systematic Study on the Hysteresis Behaviour and Reliability of MoS2 FET

For reliable use of Molybdenum Disulfide (MoS2) FETs in ULSI applications device reliability issues like hysteresisbehaviour and non idealities must be well understood andmitigated. In this work, we present unique hysteresis behaviourin the I-V characteristics of few layer MoS 2 FETs. Root causeand...

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Bibliographic Details
Published in2017 30th International Conference on VLSI Design and 2017 16th International Conference on Embedded Systems (VLSID) pp. 437 - 440
Main Authors Meersha, Adil, Sathyajit, B., Shrivastava, Mayank
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.01.2017
Subjects
Hysteresis
Logic gates
Molybdenum
Reliability
Sulfur
Temperature measurement
Voltage measurement
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Summary:For reliable use of Molybdenum Disulfide (MoS2) FETs in ULSI applications device reliability issues like hysteresisbehaviour and non idealities must be well understood andmitigated. In this work, we present unique hysteresis behaviourin the I-V characteristics of few layer MoS 2 FETs. Root causeand physics behind the hysteresis behaviour has been exploredby repeated experiments under various electrical, temperature, pressure, and environmental conditions. A trap based theory isproposed considering the device behaviour in different conditionsand these observations give insight towards device passivation andchoosing the right dielectric for reliable utilization of MoS 2 FETs.
ISSN:2380-6923
DOI:10.1109/VLSID.2017.67