ZrBO dielectrics for TSV production process

Dielectric films of ZrBO were grown using thermal-CVD Zr(BH 4 ) 4 -O 2 gas system. Oxygen gas was activated by microwave to produce its radical. The grown film showed high barrier properties for Cu diffusion with a thickness of 50 nm. Typical side step coverage was over 60% for a 45-μm-deep and 7.5-...

Full description

Saved in:
Bibliographic Details
Published in2011 IEEE International Interconnect Technology Conference pp. 1 - 3
Main Authors Hatanaka, M., Shibata, A., Harada, M., Toyoda, S., Ishikawa, M., Suu, K.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2011
Subjects
Dielectric constant
Plasma temperature
Temperature dependence
Temperature distribution
Through-silicon vias
Online AccessGet full text

Cover

More Information
Summary:Dielectric films of ZrBO were grown using thermal-CVD Zr(BH 4 ) 4 -O 2 gas system. Oxygen gas was activated by microwave to produce its radical. The grown film showed high barrier properties for Cu diffusion with a thickness of 50 nm. Typical side step coverage was over 60% for a 45-μm-deep and 7.5-aspect-ratio TSV with a high coverage of 67% at the bottom. We report ZrBO-CVD mechanism related to the coverage.
ISBN:9781457705038
1457705036
ISSN:2380-632X
2380-6338
DOI:10.1109/IITC.2011.5940277