Hot Carrier Degradation of p-LDMOS Transistors for RF Applications

• Published in: 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual pp. 626 - 627
• Main Authors: Kraft, J., Loffler, B., Knaipp, M., Wachmann, E.
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.04.2007
• Subjects: Degradation; Displays; Doping; Electron traps; hot carrier stress; Hot carriers; Implants; Interface states; p-LDMOS; Radio frequency; Stress; Voltage
• ISBN: 9781424409181; 1424409187
• ISSN: 1541-7026
• DOI: 10.1109/RELPHY.2007.369983

A drain extended p-MOS transistor has been developed focused on RF applications with operating voltages up to 12V. It is implemented in austriamicrosystems' 0.35mum SiGe BiCMOS technology and requires only one additional implant mask. Key figures of merit of F T /F MAX >11/28 GHz are achieved. From long term hot carrier stress measurement data three different degradation mechanisms were identified and correlated with TCAD simulation results. The hot carrier degradation behaviour of LDMOS transistors is subject to many investigations dealing with n-LDMOS transistors (Versari, 1999), but there are only a few about p-LDMOS transistors (Moens, 2004). This work presents for the first time results describing the p-LDMOS transistor degradation behaviour dedicated to RF applications.