100 W highly efficient octave bandwidth GaN-HEMT power amplifier

In this contribution, the design, implementation, and experimental results of a high-efficiency broadband GaN HEMT power amplifier are presented. Optimum fundamental and harmonic load impedances were obtained using load-pull simulations for the active device across the design bandwidth. A systematic...

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Bibliographic Details
Published in2012 19th International Conference on Microwaves, Radar & Wireless Communications Vol. 1; pp. 289 - 292
Main Authors Arnous, M. T., Bathich, K., Preis, S., Gruner, D., Boeck, G.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.05.2012
Subjects
Bandwidth
Broadband amplifiers
broadband power amplifier
Decision support systems
gallium nitride HEMT
load-pull analysis
matching network
Power amplifiers
Power generation
Power measurement
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Summary:In this contribution, the design, implementation, and experimental results of a high-efficiency broadband GaN HEMT power amplifier are presented. Optimum fundamental and harmonic load impedances were obtained using load-pull simulations for the active device across the design bandwidth. A systematic approach was applied for the design of wideband output and input matching networks. Continuous wave (CW) large-signal measurement results showed that across 1.1-2.0 GHz (58 % bandwidth), the output power was higher than 110 W, and 50-72% drain efficiency was achieved. Over the octave bandwidth of 1.0-2.0 GHz, at least 84 W output power was measured. The power gain was around 12 dB. An ACLR of -45 dBc was measured for an LTE signal at 42 dBm average output power under additional digital predistortion (DPD).
ISBN:9781457714351
1457714353
DOI:10.1109/MIKON.2012.6233537