Characterization of strip induced damage in ultra low-k dielectric

STEM-EDS analysis on the sidewall surface of ultra low-k dielectric (ULK), a CVD SiOC type low-k dielectric (k /spl ap/ 2.5), has been performed to study the damage behavior of low-k material during strip. Carbon depletion was observed on the sidewall surface by plasma strip using N/sub 2//H/sub 2/,...

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Published inISSM 2005, IEEE International Symposium on Semiconductor Manufacturing, 2005 pp. 183 - 185
Main Authors Tsai, J.S., Su, Y.N., Huang, R.Y., Chiou, J.M., Shieh, J.H., Chu, H.Y., Lee, J.J., Ting, C.Y., Jang, S.M., Liang, M.S.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2005
Subjects
Dielectric constant
Dielectric materials
Dielectric measurements
Hydrogen
Manufacturing processes
Plasma applications
Plasma chemistry
Plasma measurements
Semiconductor device manufacture
Strips
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Summary:STEM-EDS analysis on the sidewall surface of ultra low-k dielectric (ULK), a CVD SiOC type low-k dielectric (k /spl ap/ 2.5), has been performed to study the damage behavior of low-k material during strip. Carbon depletion was observed on the sidewall surface by plasma strip using N/sub 2//H/sub 2/, H/sub 2/, and O/sub 2/ chemistries in different ashers. The strip using N/sub 2//H/sub 2/ has minimum damage of low-k material because it forms a nitridation layer protecting ULK from subsequent damage whereas RIE mitigates the damage because of the nature of less chemical reaction.
ISBN:0780391438
9780780391437
ISSN:1523-553X
DOI:10.1109/ISSM.2005.1513330