Control of ghost plating by antireflection coating layer stacking on crystalline silicon solar cells

During the plating process, ghost plating could appear when the quality of the passivation layer is poor, and it causes an increase in the recombination rate. In this paper, light-induced plating was applied, and various passivation layers were investigated to remove ghost plating in crystalline sil...

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Bibliographic Details
Published in2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC) pp. 2910 - 2912
Main Authors Myeong Sang Jeong, Kwan Hong Min, Min Gu Kang, Jeong In Lee, Hee-eun Song
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.06.2016
Subjects
antireflection coating
Coatings
Electrodes
ghost plating
Passivation
Photovoltaic cells
Plating
Scanning electron microscopy
Silicon
silicon solar cell
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Summary:During the plating process, ghost plating could appear when the quality of the passivation layer is poor, and it causes an increase in the recombination rate. In this paper, light-induced plating was applied, and various passivation layers were investigated to remove ghost plating in crystalline silicon solar cells. These included, (1) SiN x , (2) double SiN x layer, (3) double layer with thermal silicon oxide and SiN x and (4) double layer of SiN x and SiO x by PECVD. For the plated solar cells, a laser was used to remove various ARC layers and phosphoric acid was spin-coated onto the doped silicon wafer prior to laser ablation. As a result, a thermal SiO 2 /PECVD SiN x layer showed the lowest pinhole density and its wet vapor transmission rate was characterized. The solar cell with the thermal SiO2/PECVD SiNx layer showed the lowest J 02 value, as well as improved V oc and J sc .
DOI:10.1109/PVSC.2016.7750189