3.3kV all-SiC module for power distribution apparatus

We developed 3.3kV All-SiC power module on which SiC-MOSFET and SiC-SBD were mounted for electric power distribution apparatus. This power module has characteristic structure of pin-connections and resin-molded. Total switching loss of the module is lower than the module which mounted Si-IGBT and Si...

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Bibliographic Details
Published in2017 IEEE CPMT Symposium Japan (ICSJ) pp. 199 - 202
Main Authors Taniguchi, Katsumi, Takayanagi, Ryouhei, Kaneko, Satoshi, Kanai, Naoyuki, Kumada, Keishirou, Hori, Motohito, Ikeda, Yoshinari, Maruyama, Kouji, Kawamura, Itsuo
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.11.2017
Subjects
3.3kV
All-SiC
Inverters
Multichip modules
Power distribution
Power semiconductor module
Resistance
Silicon carbide
Static VAr compensators
Switching loss
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Summary:We developed 3.3kV All-SiC power module on which SiC-MOSFET and SiC-SBD were mounted for electric power distribution apparatus. This power module has characteristic structure of pin-connections and resin-molded. Total switching loss of the module is lower than the module which mounted Si-IGBT and Si-FWD more than 60 percent.
ISSN:2475-8418
DOI:10.1109/ICSJ.2017.8240116