High-power and high-efficiency 915 nm broad-area laser diodes with window structure

This paper presents high-power high-efficiency 915 nm broad-area laser diodes with the window structure fabricated using optimized impurity-free vacancy disordering (IFVD) process.

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Bibliographic Details
Published inISLC 2012 International Semiconductor Laser Conference pp. 46 - 47
Main Authors Morita, T., Nagakura, T., Torii, K., Takauji, M., Maeda, J., Miyamoto, M., Miyajima, H., Yoshida, H.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.10.2012
Subjects
Diode lasers
Fiber lasers
Laser excitation
Optical fiber devices
Optical fibers
Power generation
Semiconductor lasers
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Summary:This paper presents high-power high-efficiency 915 nm broad-area laser diodes with the window structure fabricated using optimized impurity-free vacancy disordering (IFVD) process.
ISBN:9781457708282
1457708280
ISSN:0899-9406
1947-6981
DOI:10.1109/ISLC.2012.6348327