Off current modeling of a tunnel field effect transistor

A tunnel field effect transistor (TFET) is characterized specially by its low off current and high on current to off current ratio. For a nanoscale TFET, the off current is primarily band to band tunneling current. Off current expression in TFET is derived in this paper and device simulation has bee...

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Bibliographic Details
Published in2012 7th International Conference on Electrical and Computer Engineering pp. 814 - 817
Main Authors Islam, M. S., Ahmed, K., Elahi, M. M. M.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.12.2012
Subjects
Analytical models
band to band tunneling
Electric fields
Electric potential
Field effect transistors
Kane's model
Logic gates
reverse saturaion current
Temperature dependence
tunnel field effect transistor
Tunneling
tunneling path
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ISBN146731434X
9781467314343
DOI10.1109/ICECE.2012.6471675

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Summary:A tunnel field effect transistor (TFET) is characterized specially by its low off current and high on current to off current ratio. For a nanoscale TFET, the off current is primarily band to band tunneling current. Off current expression in TFET is derived in this paper and device simulation has been performed using SILVACO ATLAS. The analytical expression matches closely with the simulation results for different drain voltages with zero gate voltage.
ISBN:146731434X
9781467314343
DOI:10.1109/ICECE.2012.6471675