New test structure for evaluating low-k dielectric interconnect layers by using ring-oscillators and metal comb/serpentine patterns

We have developed a new test structure for evaluating low-k materials. New structure is composed of several ring-oscillators with metal comb loads and metal serpentine patterns. Metal serpentine pattern was used for correcting the shape effect. Four kinds of low-k materials were evaluated by using t...

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Bibliographic Details
Published in2011 IEEE ICMTS International Conference on Microelectronic Test Structures pp. 125 - 129
Main Authors Tamaki, Y., Ito, M., Takimoto, Y., Hashino, M., Kawamoto, Y.
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.04.2011
Subjects
Capacitance
Copper
Integrated circuit interconnections
Materials
Permittivity
Shape
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Summary:We have developed a new test structure for evaluating low-k materials. New structure is composed of several ring-oscillators with metal comb loads and metal serpentine patterns. Metal serpentine pattern was used for correcting the shape effect. Four kinds of low-k materials were evaluated by using the test structures, and relative dielectric constants for these materials were successfully measured. The advantage of the new structure has been confirmed.
ISBN:9781424485260
1424485266
ISSN:1071-9032
2158-1029
DOI:10.1109/ICMTS.2011.5976873