AlGaN/AlN/GaN High Electron Mobility Transistors with Improved Carrier Transport
Geo-magneto-resistance measurements have been made on AlGaN/GaN HEMT structures both with and without an AlN interlayer. The results show significantly higher carrier mobility at low temperatures for devices with the interlayer. Furthermore, the drop in mobility with increasing 2DEG density, commonl...
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Published in | Conference on Optoelectronic and Microelectronic Materials and Devices, 2004 pp. 29 - 32 |
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Main Authors | , , , , , , |
Format | Conference Proceeding |
Language | English |
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2004
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Abstract | Geo-magneto-resistance measurements have been made on AlGaN/GaN HEMT structures both with and without an AlN interlayer. The results show significantly higher carrier mobility at low temperatures for devices with the interlayer. Furthermore, the drop in mobility with increasing 2DEG density, commonly exhibited by AlGaN/GaN HEMTs, is dramatically reduced by introduction of the interlayer. These results provide insight into the role of alloy and interface roughness scattering on 2DEG properties |
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AbstractList | Geo-magneto-resistance measurements have been made on AlGaN/GaN HEMT structures both with and without an AlN interlayer. The results show significantly higher carrier mobility at low temperatures for devices with the interlayer. Furthermore, the drop in mobility with increasing 2DEG density, commonly exhibited by AlGaN/GaN HEMTs, is dramatically reduced by introduction of the interlayer. These results provide insight into the role of alloy and interface roughness scattering on 2DEG properties |
Author | Umana-Membreno, G.A. Buttari, D. Mishra, U.K. Parish, G. Jolley, S.M. Nener, B.D. Keller, S. |
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Snippet | Geo-magneto-resistance measurements have been made on AlGaN/GaN HEMT structures both with and without an AlN interlayer. The results show significantly higher... |
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SubjectTerms | Aluminum gallium nitride Breakdown voltage Charge carrier density Electron mobility Frequency Gallium nitride HEMTs Microwave transistors MODFETs Temperature |
Title | AlGaN/AlN/GaN High Electron Mobility Transistors with Improved Carrier Transport |
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