AlGaN/AlN/GaN High Electron Mobility Transistors with Improved Carrier Transport

Geo-magneto-resistance measurements have been made on AlGaN/GaN HEMT structures both with and without an AlN interlayer. The results show significantly higher carrier mobility at low temperatures for devices with the interlayer. Furthermore, the drop in mobility with increasing 2DEG density, commonl...

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Bibliographic Details
Published inConference on Optoelectronic and Microelectronic Materials and Devices, 2004 pp. 29 - 32
Main Authors Parish, G., Umana-Membreno, G.A., Jolley, S.M., Buttari, D., Keller, S., Nener, B.D., Mishra, U.K.
Format Conference Proceeding
LanguageEnglish
Published IEEE 2004
Subjects
Aluminum gallium nitride
Breakdown voltage
Charge carrier density
Electron mobility
Frequency
Gallium nitride
HEMTs
Microwave transistors
MODFETs
Temperature
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Summary:Geo-magneto-resistance measurements have been made on AlGaN/GaN HEMT structures both with and without an AlN interlayer. The results show significantly higher carrier mobility at low temperatures for devices with the interlayer. Furthermore, the drop in mobility with increasing 2DEG density, commonly exhibited by AlGaN/GaN HEMTs, is dramatically reduced by introduction of the interlayer. These results provide insight into the role of alloy and interface roughness scattering on 2DEG properties
ISBN:0780388208
9780780388208
DOI:10.1109/COMMAD.2004.1577484