Load-modulated GaN power amplifier implementing tunable thick film BST components

In this work, a novel adaptive broadband power amplifier (PA) design based on barium-strontium-titanate (BST) components for dynamic load modulation (DLM) is presented. The designed PA, driven in class C, makes use of a commercial GaN HEMT, and is intended to operate over 1.8-2.2 GHz with maximum ou...

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Bibliographic Details
Published in2013 European Microwave Integrated Circuit Conference pp. 416 - 419
Main Authors Arnous, Mhd Tareq, Wiens, Alex, Preis, Sebastian, Maune, Holger, Bathich, Khaled, Nikfalazar, Mohmmad, Jakoby, Rolf, Boeck, Georg
Format Conference Proceeding
LanguageEnglish
Published European Microwave Association 01.10.2013
Subjects
Adaptive matching
broadband
Broadband communication
BST
dynamic load
efficiency enhancement
ferroelectrics
GaN HEMT
Impedance
load modulation
power amplifer
Power amplifiers
Power generation
Power measurement
Transistors
tunable component
Voltage measurement
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Summary:In this work, a novel adaptive broadband power amplifier (PA) design based on barium-strontium-titanate (BST) components for dynamic load modulation (DLM) is presented. The designed PA, driven in class C, makes use of a commercial GaN HEMT, and is intended to operate over 1.8-2.2 GHz with maximum output power of 43 dBm together with high efficiency at maximum output power level. At back-off output power operation, the tunable BST-based output matching network introduces the optimum load impedance for high efficiency. The frequency and input power dependent impedance tunability is realized using a π-structure matching topology based on thick film BST varactors which have a very high breakdown voltage of higher than 500 V.