Electrical Derivative Analysis on Current Leakage in Buried-Heterostructure Lasers

A full 2-D simulation was performed to investigate electrical derivative characteristics of 1.3μm AlGaInAs/InP buried-heterostructure semiconductor lasers with different current leakage paths and to explain their physical root causes. The simulation results match with experimental data under several...

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Bibliographic Details
Published in2018 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD) pp. 95 - 96
Main Authors Shi, Hanxing, Steib, Michael, Matsui, Yasuhiro, Kocot, Chris, Roxlo, Charles
Format Conference Proceeding
LanguageEnglish
Published IEEE 01.11.2018
Subjects
buried-heterostructure
current leakage
Electric potential
Integrated circuit modeling
Laser modes
Laser theory
Performance evaluation
semiconductor laser
Semiconductor lasers
simulation
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Summary:A full 2-D simulation was performed to investigate electrical derivative characteristics of 1.3μm AlGaInAs/InP buried-heterostructure semiconductor lasers with different current leakage paths and to explain their physical root causes. The simulation results match with experimental data under several different cases, and therefore could be used as guideline to explain device performance without any destructive failure analysis. Parameters extracted from electrical derivatives could be used as screening to catch devices with inferior performance and potential reliability risk.
ISSN:2158-3242
DOI:10.1109/NUSOD.2018.8570278