Wideband 40GHz TSV modeling analysis under high speed on double side probing methodology

• Published in: 2015 IEEE 65th Electronic Components and Technology Conference (ECTC) pp. 2026 - 2029
• Main Authors: Chiu Hsiang Wang, Kuang-Chin Fan, Hsin-Hung Lee
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.05.2015
• Subjects: Analytical models; Couplings; Crosstalk; Integrated circuit modeling; Radio frequency; Silicon; Through-silicon vias
• ISSN: 0569-5503; 2377-5726
• DOI: 10.1109/ECTC.2015.7159880

The Wide bandwidth and smaller form factor, high-speed TSV I/O channel design in three-dimensional integrated circuit (3D IC) becomes a trend with the unremittingly evolving technology, Through-silicon-Via (TSV) provide low power consumption and miniature chip size base on reduction of the vertical interconnection between stacked dies. However this TSV based 3D-IC systems is a significant design consideration is the coupling noise between aggressor and victim TSV. There are many high speed I/O signal integration issues in 3D IC DDR memory, so crosstalk propagation through silicon via is a serious limiting factor on the performance of 3D IC devices and circuits. This paper discusses factors jitter affecting crosstalk which distance between aggressor and victim TSV and ranging it from 20μm, 60μm, 100μm to 200μm, we also design some fence ground pattern to isolation crosstalk effect between aggressor and victim TSV. That has been made to verify the Radio-Frequency (RF) characteristic of double side four ports TSV. We propose the modified high speed electrical equivalent model of TSV with several shielded TSV on ground. This model circuit helps to understand the measurement and simulation of accuracy on high speed I/O and find DDR signal issue in eye diagram analysis. Therefore, the measurement will be absolutely precise with the embedded way on measurement. With the help of the direct double side probing system, four ports S parameters were measured up to 40 GHz to validate the modeled results.