Multi-dimensional trade-off considerations of the 750V micro pattern trench IGBT for electric drive train applications

• Published in: 2015 IEEE 27th International Symposium on Power Semiconductor Devices & IC's (ISPSD) pp. 105 - 108
• Main Authors: Wolter, Frank, Roesner, Wolfgang, Cotorogea, Maria, Geinzer, Thomas, Seider-Schmidt, Martina, Kae-Horng Wang
• Format: Conference Proceeding
• Language: English
• Published: IEEE 01.05.2015
• Subjects: Capacitance; Insulated gate bipolar transistors; Logic gates; Plasmas; Surges; Switches; Switching loss
• ISBN: 9781479962594; 1479962597
• ISSN: 1063-6854; 1946-0201
• DOI: 10.1109/ISPSD.2015.7123400

The EDT2 750V uses a micro pattern trench cell with a narrow mesa for reducing the on-state losses with a tailored channel width for short circuit robustness. To account for high system stray inductances (L stray ) and currents for Full or Hybrid Electric Vehicle inverter applications, it features a 750V voltage rating compared to the predecessor IGBT3 650V by an optimized vertical structure and proper plasma shaping. This plasma distribution not only determines the performance tradeoff between on-state and switching losses, but at the same time defines the surge voltage for a given L stray *I in the application as visualized in a switch-off loss vs. surge voltage trade-off diagram. Shaping of the feedback capacitance Cgc optimizes the tunability of the switching slopes by means of an external gate resistor for an easier adaption to a wider range of system inductances with low losses.